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Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that...

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Detalhes bibliográficos
Main Authors: Gao, Na, Huang, Kai, Li, Jinchai, Li, Shuping, Yang, Xu, Kang, Junyong
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2012
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3495303/
https://ncbi.nlm.nih.gov/pubmed/23150780
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep00816
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