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Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group
2012
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3495303/ https://ncbi.nlm.nih.gov/pubmed/23150780 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep00816 |
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