Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowi...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Dehzangi, Arash, Abdullah, A Makarimi, Larki, Farhad, Hutagalung, Sabar D, Saion, Elias B, Hamidon, Mohd N, Hassan, Jumiah, Gharayebi, Yadollah
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Springer 2012
Gaiak:
Nano Express
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC3489690/
https://ncbi.nlm.nih.gov/pubmed/22781031
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-381
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