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Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowi...

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Detalhes bibliográficos
Main Authors: Dehzangi, Arash, Abdullah, A Makarimi, Larki, Farhad, Hutagalung, Sabar D, Saion, Elias B, Hamidon, Mohd N, Hassan, Jumiah, Gharayebi, Yadollah
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2012
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3489690/
https://ncbi.nlm.nih.gov/pubmed/22781031
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-381
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