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Increased conductance of individual self-assembled GeSi quantum dots by inter-dot coupling studied by conductive atomic force microscopy
The conductive properties of individual self-assembled GeSi quantum dots (QDs) are investigated by conductive atomic force microscopy on single-layer (SL) and bi-layer (BL) GeSi QDs with different dot densities at room temperature. By comparing their average currents, it is found that the BL and hig...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3463465/ https://ncbi.nlm.nih.gov/pubmed/22650414 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-278 |
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