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Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD
In this paper, five-period InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) were grown by metal organic chemical vapor deposition with 405-nm light beam in situ monitoring system. Based on the signal of 405-nm in situ monitoring system, the related information of growth rate, indiu...
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| Main Authors: | , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer
2012
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3442964/ https://ncbi.nlm.nih.gov/pubmed/22650991 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-282 |
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