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Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO(2) surfaces. Moreover,...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3403976/ https://ncbi.nlm.nih.gov/pubmed/22559207 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-243 |
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