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Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of th...

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Detalhes bibliográficos
Main Authors: Zhao, Xiaofeng, Wen, Dianzhong, Li, Gang
Formato: Artigo
Idioma:Inglês
Publicado em: Molecular Diversity Preservation International (MDPI) 2012
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3386745/
https://ncbi.nlm.nih.gov/pubmed/22778646
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s120506369
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