Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HS...

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Detalhes bibliográficos
Main Authors: Xiaofeng Zhao, Baozeng Li, Dianzhong Wen
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2017-01-01
Colecção:Sensors
Assuntos:
nc-Si:H/c-Si heterojunction
magnetic sensitive transistor
MEMS technology
temperature characteristics
Acesso em linha:http://www.mdpi.com/1424-8220/17/1/212
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