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Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?
Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve...
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| Main Authors: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2012
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3384075/ https://ncbi.nlm.nih.gov/pubmed/22741059 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep00475 |
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