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One dimensional transport in silicon nanowire junction-less field effect transistors
Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regi...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5462787/ https://ncbi.nlm.nih.gov/pubmed/28592820 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-03138-5 |
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