Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxid...

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Bibliographic Details
Main Authors: Peng, Hai Yang, Li, Yong Feng, Lin, Wei Nan, Wang, Yu Zhan, Gao, Xing Yu, Wu, Tom
Format: Artigo
Language:Inglês
Published: Nature Publishing Group 2012
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Article
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC3369197/
https://ncbi.nlm.nih.gov/pubmed/22679556
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep00442
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