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Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxid...
Tallennettuna:
| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group
2012
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3369197/ https://ncbi.nlm.nih.gov/pubmed/22679556 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep00442 |
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