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Wafer-scale fabrication of high-aspect ratio nanochannels based on edge-lithography technique

This paper introduced a wafer-scale fabrication approach for the preparation of nanochannels with high-aspect ratio (the ratio of the channel depth to its width). Edge lithography was used to pattern nanogaps in an aluminum film, which was functioned as deep reactive ion etching mask thereafter to f...

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Detalhes bibliográficos
Main Authors: Xie, Quan, Zhou, Qing, Xie, Fei, Sang, Jianming, Wang, Wei, Zhang, Haixia Alice, Wu, Wengang, Li, Zhihong
Formato: Artigo
Idioma:Inglês
Publicado em: American Institute of Physics 2012
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3293387/
https://ncbi.nlm.nih.gov/pubmed/22396721
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3683164
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