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Physical properties of metal-doped zinc oxide films for surface acoustic wave application
Metal-doped ZnO [MZO] thin films show changes of the following properties by a dopant. First, group III element (Al, In, Ga)-doped ZnO thin films have a high conductivity having an n-type semiconductor characteristic. Second, group I element (Li, Na, K)-doped ZnO thin films have high resistivity due...
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| 主要な著者: | , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer
2012
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3275533/ https://ncbi.nlm.nih.gov/pubmed/22221881 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-25 |
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