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Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process

In this study, we fabricated a wireless micro FET (field effect transistor) pressure sensor based on the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The wireless micro pressure sensor is composed of a FET pressure sensor, an oscillator, an amplifier and an a...

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Autors principals: Dai, Ching-Liang, Lu, Po-Wei, Wu, Chyan-Chyi, Chang, Chienliu
Format: Artigo
Idioma:Inglês
Publicat: Molecular Diversity Preservation International (MDPI) 2009
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Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3260611/
https://ncbi.nlm.nih.gov/pubmed/22291534
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s91108748
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