Cargando...
Compound semiconductor nanotube materials grown and fabricated
A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The com...
Gardado en:
| Main Authors: | , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer
2011
|
| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3254589/ https://ncbi.nlm.nih.gov/pubmed/22152046 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-627 |
| Tags: |
Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|