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Compound semiconductor nanotube materials grown and fabricated
A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The com...
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| Hauptverfasser: | , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer
2011
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3254589/ https://ncbi.nlm.nih.gov/pubmed/22152046 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-627 |
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