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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

We demonstrate a method for the low temperature growth (350 °C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-κ dielectrics and some flexible substrates. The process is com...

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Detaylı Bibliyografya
Yayımlandı:J Vis Exp
Asıl Yazarlar: Vollebregt, Sten, Ishihara, Ryoichi
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: MyJove Corporation 2015
Konular:
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC4692772/
https://ncbi.nlm.nih.gov/pubmed/26709530
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3791/53260
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