Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

Si/Si(0.66)Ge(0.34)coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-section...

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Hlavní autoři: Wang, Rui, Yoon, Soon Fatt, Lu, Fen, Fan, Wei Jun, Liu, Chong Yang, Loh, Ter-Hoe, Nguyen, Hoai Son, Narayanan, Balasubramanian
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2007
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3245654/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-007-9046-8
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