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A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates

Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bor...

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Hlavní autoři: Zhong, Zhenyang, Gong, Hua, Ma, Yingjie, Fan, Yongliang, Jiang, Zuimin
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2011
Témata:
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211410/
https://ncbi.nlm.nih.gov/pubmed/21711814
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-322
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