Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN(x):H films

In this study, a wide range of a-SiN(x):H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH(3 )and SiH(4). The silicon-rich a-SiN(x):H films (SRSN) were sandwiched between a bottom the...

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Bibliografiske detaljer
Main Authors: Sahu, Bhabani Shankar, Delachat, Florian, Slaoui, Abdelilah, Carrada, Marzia, Ferblantier, Gerald, Muller, Dominique
Format: Artigo
Sprog:Inglês
Udgivet: Springer 2011
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211231/
https://ncbi.nlm.nih.gov/pubmed/21711712
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-178
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