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Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN(x):H films
In this study, a wide range of a-SiN(x):H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH(3 )and SiH(4). The silicon-rich a-SiN(x):H films (SRSN) were sandwiched between a bottom the...
Tallennettuna:
| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Springer
2011
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211231/ https://ncbi.nlm.nih.gov/pubmed/21711712 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-178 |
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