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Hf-based high-k materials for Si nanocrystal floating gate memories
Pure and Si-rich HfO(2 )layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO(2)/SiO(2 )memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO(2 )active l...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2011
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211225/ https://ncbi.nlm.nih.gov/pubmed/21711676 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-172 |
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