載入...
Hf-based high-k materials for Si nanocrystal floating gate memories
Pure and Si-rich HfO(2 )layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO(2)/SiO(2 )memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO(2 )active l...
Na minha lista:
| Main Authors: | , , , |
|---|---|
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Springer
2011
|
| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211225/ https://ncbi.nlm.nih.gov/pubmed/21711676 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-172 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|