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Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentratio...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2011
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211175/ https://ncbi.nlm.nih.gov/pubmed/21711625 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-129 |
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