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Growth Mechanism of Self-Catalyzed Group III−V Nanowires
[Image: see text] Group III−V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While th...
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| Hoofdauteurs: | , , , , , , , , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
American Chemical Society
2010
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| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3028567/ https://ncbi.nlm.nih.gov/pubmed/20939507 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl1022699 |
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