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Semipolar r-plane ZnO films on Si(100) substrates: Thin film epitaxy and optical properties
We report heteroepitaxial growth of [Formula: see text] oriented (r-plane) ZnO films on Si(100) substrates. The films were grown by pulsed laser deposition and integration of ZnO with silicon was achieved using a tetragonal yttria stabilized zirconia (YSZ) buffer layer. It was observed that ZnO film...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
American Institute of Physics
2010
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2903462/ https://ncbi.nlm.nih.gov/pubmed/20634966 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3406260 |
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