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Semipolar r-plane ZnO films on Si(100) substrates: Thin film epitaxy and optical properties

We report heteroepitaxial growth of [Formula: see text] oriented (r-plane) ZnO films on Si(100) substrates. The films were grown by pulsed laser deposition and integration of ZnO with silicon was achieved using a tetragonal yttria stabilized zirconia (YSZ) buffer layer. It was observed that ZnO film...

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書誌詳細
主要な著者: Aggarwal, Ravi, Zhou, Honghui, Jin, Chunming, Narayan, J., Narayan, Roger J.
フォーマット: Artigo
言語:Inglês
出版事項: American Institute of Physics 2010
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オンライン・アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC2903462/
https://ncbi.nlm.nih.gov/pubmed/20634966
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3406260
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