טוען...
Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
The morphology and transition thickness (t(c)) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. Andt(c)decreased when the thin InGaAs was used as a buffer layer instead of t...
שמור ב:
| Main Authors: | , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2009
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2894241/ https://ncbi.nlm.nih.gov/pubmed/20596311 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-009-9304-z |
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