Loading...
Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
The morphology and transition thickness (t(c)) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. Andt(c)decreased when the thin InGaAs was used as a buffer layer instead of t...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Artigo |
| Language: | Inglês |
| Published: |
Springer
2009
|
| Subjects: | |
| Online Access: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2894241/ https://ncbi.nlm.nih.gov/pubmed/20596311 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-009-9304-z |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|