Загрузка...
Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits
Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semicond...
Сохранить в:
| Главные авторы: | , , , , |
|---|---|
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
National Academy of Sciences
2009
|
| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2783010/ https://ncbi.nlm.nih.gov/pubmed/19940239 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.0911713106 |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|