Yüklüyor......
Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits
Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semicond...
Kaydedildi:
| Asıl Yazarlar: | , , , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
National Academy of Sciences
2009
|
| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2783010/ https://ncbi.nlm.nih.gov/pubmed/19940239 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.0911713106 |
| Etiketler: |
Etiketle
Etiket eklenmemiş, İlk siz ekleyin!
|