Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction

CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a key issue. To optimize chip design, trade-offs between reliability, speed, power consumption, and cost must be carried out. This requires modeling and prediction of device instability, and a major source of ins...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Jian Fu Zhang, Rui Gao, Meng Duan, Zhigang Ji, Weidong Zhang, John Marsland
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI AG 2022-04-01
Schriftenreihe:Electronics
Schlagworte:
reliability
instability
aging
degradation
bias temperature instability (BTI)
NBTI
Online Zugang:https://www.mdpi.com/2079-9292/11/9/1420
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