Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

Abstract CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to res...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
मुख्य लेखकों: Lin Jin, Long Wen, Li Liang, Qin Chen, Yunfei Sun
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: SpringerOpen 2018-02-01
श्रृंखला:Nanoscale Research Letters
विषय:
Surface plasmons
Plasmonics
Transparent conductor oxides
Epsilon-near-zero
ऑनलाइन पहुंच:http://link.springer.com/article/10.1186/s11671-018-2446-0
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