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Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response onl...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Jin, Lin, Wen, Long, Liang, Li, Chen, Qin, Sun, Yunfei
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5796959/
https://ncbi.nlm.nih.gov/pubmed/29396620
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2446-0
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