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Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films
Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O(2)) was reported. Red-shift of λ(ENZ) (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modu...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6267609/ https://ncbi.nlm.nih.gov/pubmed/30405091 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8110922 |
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