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Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors

In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiC<sub>p</sub>) were added into the Ag sinter joining paste to improve the high-temperature reli...

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Main Authors: Seungjun Noh, Hao Zhang, Katsuaki Suganuma
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2018-12-01
Colecção:Materials
Assuntos:
Acesso em linha:https://www.mdpi.com/1996-1944/11/12/2531
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