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Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire
(11-22) semi-polar GaN is expected to exhibit major advantages compared with current c-plane polar GaN in the fabrication of long wavelength such as green and yellow emitters. However, all the III-nitride based semi-/non- polar laser diodes (LDs) reported so far have been achieved exclusively based...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2017-04-01
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| Colecção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/1.4981137 |
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