Structure and morphology of CrSi<sub>2</sub> layers formed by rapid thermal treatment

The formation of chromium disilicide layers on n-type single crystal silicon substrates (111) during rapid thermal annealing in heat balance mode by the methods of Rutherford backscattering, X-ray diffraction and transmission electron microscopy of cross sections was investigated. Chromium films of...

Fuld beskrivelse

Na minha lista:
Bibliografiske detaljer
Main Authors: J. A. Solovjov, V. A. Pillipenko, P. I. Gaiduk
Format: Artigo
Sprog:Russo
Udgivet: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2020-06-01
Serier:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Fag:
rapid thermal treatment
chromium disilicide
structure and phase transformations
surface morphology
Online adgang:https://doklady.bsuir.by/jour/article/view/2656
Tags: Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!

Lignende værker