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Structure and morphology of CrSi<sub>2</sub> layers formed by rapid thermal treatment
The formation of chromium disilicide layers on n-type single crystal silicon substrates (111) during rapid thermal annealing in heat balance mode by the methods of Rutherford backscattering, X-ray diffraction and transmission electron microscopy of cross sections was investigated. Chromium films of...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Russo |
| Publicado em: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-06-01
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| Colecção: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Assuntos: | |
| Acesso em linha: | https://doklady.bsuir.by/jour/article/view/2656 |
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