Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors

This work proposes an InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-emitting (USE) light-emitting diode (LED) and describes the sidewall light emission characteristics for the application of backlight units in display technology. The USE-LEDs are fabricated with top (ITO/distributed...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijät: Tae Kyoung Kim, Abu Bashar Mohammad Hamidul Islam, Yu-Jung Cha, Seung Hyun Oh, Joon Seop Kwak
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI AG 2022-04-01
Sarja:Nanomaterials
Aiheet:
light-emitting diodes
ultrathin side-emitting
ZnO
nanorods
light output power
light extraction efficiency
Linkit:https://www.mdpi.com/2079-4991/12/8/1342
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