Drift-Diffusion Model parameterS Optimization

A new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. Modified dir...

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Bibliografiske detaljer
Main Authors: T. T. Trung, A. M. Borovik, V. R. Stempitsky
Format: Artigo
Sprog:Russo
Udgivet: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Serier:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Fag:
наноразмерный моп-транзистор
компьютерное моделирование
модель подвижности дарвиша
оптимизация
метод прямого поиска
Online adgang:https://doklady.bsuir.by/jour/article/view/385
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