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Drift-Diffusion Model parameterS Optimization
A new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. Modified dir...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Russo |
| Publicado em: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Colecção: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Assuntos: | |
| Acesso em linha: | https://doklady.bsuir.by/jour/article/view/385 |
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