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27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION
Current-voltage characteristics of MOSFET are obtained by computer simulation and their analysis is performed. The inadequacy of the classical models for simulation of nanoscale structures is revealed, as well as the unsuitability methods of direct quantum description for studies requiring a large n...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Russo |
| Pubblicazione: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Serie: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Soggetti: | |
| Accesso online: | https://doklady.bsuir.by/jour/article/view/370 |
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