Electron Traps in GaAs Grown by Molecular Beam Epitaxy on On-axis (100) and Off-axis Substrates

Deep level transient spectroscopy (DLTS) was used to characterize the electron traps present in the bulkGaAs grown by molecular beam epitaxy (MBE) on on-axis (100) and off-axis (4° towards the (111) Adirection) substrates. Two electron traps were obtained for each sample having identical correspondi...

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Detalhes bibliográficos
Main Authors: R. Sarmiento, A. Somintac, L. Guiao, F. Agra, A. Salvador
Formato: Artigo
Idioma:Inglês
Publicado em: University of the Philippines 2003-06-01
Colecção:Science Diliman
Assuntos:
Deep level transient spectroscopy
Molecular Beam Epitaxy
Acesso em linha:http://journals.upd.edu.ph/index.php/sciencediliman/article/view/125/116
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