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Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber
The quality of germanium (Ge) epitaxial film grown directly on a silicon (Si) (001) substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD) system is studied. The growth sequence consists of several steps at low temperature (LT) at 400 °C,...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2013-09-01
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| Colecção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/1.4822424 |
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