A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

Metal–insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underl...

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Bibliographic Details
Main Authors: Jiang-Jing Wang, Ya-Zhi Xu, Riccardo Mazzarello, Matthias Wuttig, Wei Zhang
Format: Artigo
Language:Inglês
Published: MDPI AG 2017-07-01
Series:Materials
Subjects:
metal–insulator transition
disorder
Anderson insulator
electron localization
phase-change materials
Online Access:https://www.mdpi.com/1996-1944/10/8/862
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