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Novel SiC/Si heterojunction LDMOS with electric field modulation effect by reversed L-shaped field plate
A novel SiC/Si heterojunction lateral double-diffused metal-oxidesemiconductor (LDMOS) with a reversed L-shaped field plate and a stepped oxide layer has been proposed to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp). The reversed L-shaped field plate is...
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| 主要な著者: | , , , , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Elsevier
2020-03-01
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| シリーズ: | Results in Physics |
| 主題: | |
| オンライン･アクセス: | http://www.sciencedirect.com/science/article/pii/S2211379719325756 |
| タグ: |
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