Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars

To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical performance are investigated by numerical simu...

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Hlavní autoři: Jingwei Guo, Shengdong Hu, Jian'an Wang, Gang Guo, Chang Liu, Han Yang, Shenglong Ran
Médium: Artigo
Jazyk:Inglês
Vydáno: Elsevier 2020-09-01
Edice:Results in Physics
Témata:
LDMOS
Trench
Breakdown voltage
Specific on-resistance
On-line přístup:http://www.sciencedirect.com/science/article/pii/S2211379720317216
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