Nalaganje...

Novel SiC/Si heterojunction LDMOS with electric field modulation effect by reversed L-shaped field plate

A novel SiC/Si heterojunction lateral double-diffused metal-oxidesemiconductor (LDMOS) with a reversed L-shaped field plate and a stepped oxide layer has been proposed to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp). The reversed L-shaped field plate is...

Popoln opis

Shranjeno v:
Bibliografske podrobnosti
Main Authors: Qi Li, Leilei Yuan, Fabi Zhang, Haiou Li, Gongli Xiao, Yonghe Chen, Tangyou Sun, Xingpeng Liu, Tao Fu
Format: Artigo
Jezik:Inglês
Izdano: Elsevier 2020-03-01
Serija:Results in Physics
Teme:
Online dostop:http://www.sciencedirect.com/science/article/pii/S2211379719325756
Oznake: Označite
Brez oznak, prvi označite!