Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields
A novel channel mobility model with two-dimensional (2D) aspect is presented covering the effects of source/drain voltage (<i>V<sub>DS</sub></i>) and gate voltage (<i>V<sub>GS</sub></i>), and incorporating the drift and diffusion current on the surface channel at the nano-node level, at the 28-nm no...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
MDPI AG
2022-02-01
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| Sraith: | Crystals |
| Ábhair: | |
| Rochtain ar líne: | https://www.mdpi.com/2073-4352/12/2/295 |
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